JACoW is a publisher in Geneva, Switzerland that publishes the proceedings of accelerator conferences held around the world by an international collaboration of editors.
@inproceedings{asaduzzaman:srf2023-mopmb005,
author = {M. Asaduzzaman and T. Junginger and R.E. Laxdal and R.M.L. McFadden and E. Thoeng},
title = {{Muon Spin Rotation Studies of Bilayer Superconductors and Low Temperature Baked Niobium}},
% booktitle = {Proc. SRF'23},
booktitle = {Proc. 21th Int. Conf. RF Supercond. (SRF'23)},
pages = {62--66},
eid = {MOPMB005},
language = {english},
keywords = {interface, experiment, cavity, polarization, niobium},
venue = {Grand Rapids, MI, USA},
series = {International Conference on RF Superconductivity},
number = {21},
publisher = {JACoW Publishing, Geneva, Switzerland},
month = {09},
year = {2023},
issn = {2673-5504},
isbn = {978-3-95450-234-9},
doi = {10.18429/JACoW-SRF2023-MOPMB005},
url = {https://jacow.org/srf2023/papers/mopmb005.pdf},
abstract = {{Muon spin rotation (muSR) results have shown that vortex penetration into Nb can be delayed up to the superheating field Hsh by a single layer of a material with larger London penetration depth. For low temperature baked (LTB) Nb an increase in the vortex penetration field Hvp has also been observed. While clearly exceeding the lower critical field Hc1, Hvp was found to remain significantly below Hsh for LTB niobium (Superconductor Science and Technology 30 (12), 125012). Further, magnetometry experiments suggested that there is no interface barrier in LTB Nb and that the apparent Hvp increase as observed by muSR was due to surface pinning (Scientific Reports 12 (1), 5522). By varying the implantation depth of ~4.1 MeV muons using moderating foils, new muSR measurements confirm that the apparent Hvp increase in LTB Nb is indeed due to surface pinning, while for a Nb₃Sn/Nb bilayer we find an interface barrier for flux penetration. These results confirm the potential of using superconducting bilayers to achieve a flux free Meissner state up to the superheating field of the substrate.}},
}